AP15N03GH-HF advanced power n-channel enhancement mod e electronics corp. power mosfet low gate charge bv dss 30v simple drive requirement r ds(on) 80m fast switching i d 15a rohs compliant description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value unit rthj-c maximum thermal resistance, junction-case 4.8 /w rthj-a 62.5 /w data & specifications subject to change without notice 201509105 maximum thermal resistance, junction-ambient (pcb mount) 3 1 thermal data parameter pulsed drain current 1 50 operating junction temperature range -55 to 150 linear derating factor 0.21 storage temperature range total power dissipation 26 -55 to 150 drain current, v gs @ 10v 15 drain current, v gs @ 10v 9 drain-source voltage 30 gate-source voltage + 20 parameter rating halogen-free product g d s to-252(h) g d s a p15n03 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the to-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v bv dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.037 -v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =8a - - 80 m ? v gs =4.5v, i d =6a - - 100 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =8a - 7 - s i dss drain-source leakage current v ds =30v, v gs =0v ` - 1 ua drain-source leakage current (t j =125 o c) v ds =24v, v gs =0v - - 250 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =8a - 4.6 nc q gs gate-source charge v ds =24v - 1.1 nc q gd gate-drain ("miller") charge v gs =5v - 3 nc t d(on) turn-on delay time 2 v ds =15v - 4.9 - ns t r rise time i d =8a - 22.5 - ns t d(off) turn-off delay time r g =3.4 - 12.2 - ns t f fall time v gs =10v - 3.3 - ns c iss input capacitance v gs =0v - 160 - pf c oss output capacitance v ds =25v - 107 - pf c rss reverse transfer capacitance f=1.0mhz - 32 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.3v - - 15 a i sm pulsed source current ( body diode ) 1 --50 a v sd forward on voltage 2 i s =15a, v gs =0v - - 1.3 v notes: 1.pulse width limited by maximum junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 3.surface mounted on 1 in 2 copper pad of fr4 board AP15N03GH-HF .
a p15n03gh-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8.0v 6.0v v g =4.0v 0 10 20 30 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 8.0v 6.0v v g =4.0v t c =150 o c 40 50 60 70 80 90 246810 v gs gate-to-source voltage (v) r ds(on) (m ) i d =8a t c =25 o c 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =8a v g =10v 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 v sd (v) i s (a) t j =25 o c t j =150 o c 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 t j , junction temperature( o c) v gs(th) (v) .
AP15N03GH-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0 4 8 12 16 0246810 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =16v v ds =20v v ds =24v i d =8a t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 5v q gs q gd q g charge 0 100 200 300 400 500 1 5 9 13 17 21 25 29 v ds (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 100us 1ms 10ms 100ms dc .
AP15N03GH-HF marking information 5 part numbe r package code date code (ywwsss) y last digit of the year ww week sss sequence 15n03gh ywwsss meet rohs requirement for low voltage mosfet only .
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